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mrf6s23140hr3 mrf6s23140hsr3 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for cdma base station applications with frequencies from 2300 to 2400 mhz. suitable for wimax, wibro and multicarrier amplifier applications. to be used in class ab and class c wll applications. ? typical 2 - carrier w - cdma performance: v dd = 28 volts, i dq = 1300 ma, p out = 28 watts avg., f = 2390 mhz, channel bandwidth = 3.84 mhz, par = 8.5 db @ 0.01% probability on ccdf. power gain ? 15.2 db drain efficiency ? 25% im3 @ 10 mhz offset ? - 37 dbc in 3.84 mhz channel bandwidth acpr @ 5 mhz offset ? - 40 dbc in 3.84 mhz channel bandwidth ? capable of handling 10:1 vswr, @ 32 vdc, 2390 mhz, 140 watts cw output power features ? characterized with series equivalent large - signal impedance parameters ? internally matched for ease of use ? qualified up to a maximum of 32 v dd operation ? integrated esd protection ? designed for lower memory effects and wide instantaneous bandwidth applications ? rohs compliant ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +68 vdc gate - source voltage v gs - 0.5, +12 vdc storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 82 c, 140 w cw case temperature 75 c, 28 w cw r jc 0.29 0.33 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 2 (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iv (minimum) 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: mrf6s23140h rev. 2, 12/2008 freescale semiconductor technical data mrf6s23140hr3 mrf6s23140hsr3 2300 - 2400 mhz, 28 w avg., 28 v 2 x w - cdma lateral n - channel rf power mosfets case 465c - 02, style 1 ni - 880s mrf6s23140hsr3 case 465b - 03, style 1 ni - 880 mrf6s23140hr3 ? freescale semiconductor, inc., 2006, 2008. all rights reserved.
2 rf device data freescale semiconductor mrf6s23140hr3 mrf6s23140hsr3 table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 68 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 500 n dc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 300 adc) v gs(th) 1 2 3 vdc gate quiescent voltage (v dd = 28 vdc, i d = 1300 madc, measured in functional test) v gs(q) 2 2.8 4 vdc drain - source on - voltage (v gs = 10 vdc, i d = 3 adc) v ds(on) 0.1 0.21 0.3 vdc dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 2 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 1300 ma, p out = 28 w avg., f = 2390 mhz, 2 - carrier w - cdma, 3.84 mhz channel bandwidth carriers. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. im3 measured in 3.84 mhz bandwidth @ 10 mhz offset. par = 8.5 db @ 0.01% probability on ccdf. power gain g ps 13 15.2 17 db drain efficiency d 23 25 ? % intermodulation distortion im3 ? -37 -35 dbc adjacent channel power ratio acpr ? -40 -38 dbc input return loss irl ? -15 ? db 1. part internally matched both on input and output.
mrf6s23140hr3 mrf6s23140hsr3 3 rf device data freescale semiconductor figure 1. mrf6s23140hr3(sr3) test circuit schematic z10 0.193 x 1.170 microstrip z11, z13 0.712 x 0.095 microstrip z12, z14 0.098 x 0.095 microstrip z15 0.115 x 0.550 microstrip z16 0.250 x 0.110 microstrip z17 0.539 x 0.068 microstrip z18 0.956 x 0.068 microstrip pcb taconic rf - 35, 0.030 , r = 3.5 z1 0.678 x 0.068 microstrip z2 0.420 x 0.068 microstrip z3 0.845 x 0.200 microstrip z4 0.175 x 0.530 microstrip z5, z6 0.025 x 0.530 microstrip z7 0.514 x 0.050 microstrip z8 0.507 x 0.050 microstrip z9 0.097 x 1.170 microstrip z1 rf input c1 z2 z3 z4 z5 z6 dut z9 c2 rf output z10 z15 z16 z17 z18 c9 b1 v bias v supply c11 + c10 c12 + r1 c3 z7 z8 c4 b2 c15 + c14 c16 + c13 c21 c22 c7 c23 c24 + z11 c6 z12 c17 c18 c5 c19 c20 + z14 c8 z13 table 5. mrf6s23140hr3(sr3) test circuit component designations and values part description part number manufacturer b1, b2 ferrite beads, short 2743019447 fair - rite c1, c2, c3, c4, c5, c6, c7, c8 5.6 pf chip capacitors atc100b5r6ct500xt atc c9, c13 0.01 f, 100 v chip capacitors c1825c103j1rac kemet c10, c14, c17, c21 2.2 f, 50 v chip capacitors c1825c225j5rac kemet c11, c15 22 f, 25 v tantalum chip capacitors T491D226K025AT kemet c12, c16 47 f, 16 v tantalum chip capacitors t491d476k016at kemet c18, c19, c22, c23 10 f, 50 v chip capacitors grm55dr61h106ka88b murata c20, c24 330 f, 63 v electrolytic capacitors emvy630gtr331mmh0s chemi - con r1 10 , 1/4 w chip resistor crcw120610r0fkea vishay
4 rf device data freescale semiconductor mrf6s23140hr3 mrf6s23140hsr3 figure 2. mrf6s23140hr3(sr3) test circuit component layout b1 cut out area mrf6s23140h rev 3 r1 c12 c11 c9* c10* c1 c4 c13* c14* c16 b2 c15 c8 c7 c23 c24 c21 c22 c2 c17 c18 c20 c19 c6 c5 * stacked c3
mrf6s23140hr3 mrf6s23140hsr3 5 rf device data freescale semiconductor typical characteristics g ps , power gain (db) irl, input return loss (db) im3 (dbc), acpr (dbc) ?18 ?9 ?12 ?15 2430 2270 irl g ps acpr f, frequency (mhz) figure 3. 2 - carrier w - cdma broadband performance @ p out = 28 watts avg. 2410 2390 2370 2350 2330 2310 2290 15.6 15.5 ?42 28 27 26 ?36 ?40 d , drain efficiency (%) d 15.4 15.3 15.2 15 14.8 14.9 15.1 ?38 ?34 25 ?6 g ps , power gain (db) irl, input return loss (db) im3 (dbc), acpr (dbc) ?18 ?9 ?12 ?15 2430 2270 irl g ps acpr im3 f, frequency (mhz) figure 4. 2 - carrier w - cdma broadband performance @ p out = 56 watts avg. 2410 2390 2370 2350 2330 2310 2290 15.1 15 ?33 38 37 36 ?27 ?31 d , drain efficiency (%) d 14.9 14.8 14.7 14.5 14.3 14.4 14.6 ?29 ?25 35 ?6 figure 5. two - tone power gain versus output power 100 11 18 1 i dq = 1950 ma 1625 ma p out , output power (watts) pep 16 15 14 10 300 g ps , power gain (db) 13 1300 ma 975 ma 650 ma v dd = 28 vdc f1 = 2345 mhz, f2 = 2355 mhz two?tone measurements, 10 mhz tone spacing figure 6. third order intermodulation distortion versus output power ?50 1 i dq = 650 ma p out , output power (watts) pep 100 ?20 ?30 ?40 ?60 v dd = 28 vdc f1 = 2345 mhz, f2 = 2355 mhz two?tone measurements, 10 mhz tone spacing 10 intermodulation distortion (dbc) imd, third order ?10 1625 ma 975 ma 1300 ma 17 12 300 v dd = 28 vdc p out = 28 w (avg.) i dq = 1300 ma, 2?carrier w?cdma 10 mhz carrier spacing, 3.84 mhz channel bandwidth par = 8.5 db @ 0.01% probability (ccdf) im3 v dd = 28 vdc p out = 56 w (avg.) i dq = 1300 ma, 2?carrier w?cdma 10 mhz carrier spacing, 3.84 mhz channel bandwidth par = 8.5 db @ 0.01% probability (ccdf) 1950 ma
6 rf device data freescale semiconductor mrf6s23140hr3 mrf6s23140hsr3 typical characteristics figure 7. intermodulation distortion products versus tone spacing 10 ?60 0 0.1 7th order two?tone spacing (mhz) v dd = 28 vdc, p out = 140 w (pep) i dq = 1300 ma, two?tone measurements (f1 + f2)/2 = center frequency of 2350 mhz 5th order 3rd order ?20 ?30 ?40 ?50 1 100 imd, intermodulation distortion (dbc) figure 8. pulsed cw output power versus input power 43 59 p in , input power (dbm) v dd = 28 vdc, i dq = 1300 ma pulsed cw, 8 sec(on), 1 msec(off) f = 2350 mhz 49 45 33 31 37 35 41 actual ideal 57 55 51 53 47 29 p out , output power (dbm) im3 (dbc), acpr (dbc) figure 9. 2 - carrier w - cdma acpr, im3, power gain and drain efficiency versus output power 0 ?55 p out , output power (watts) avg. 42 ?20 30 ?25 24 ?30 18 ?35 6 ?45 1 10 100 ?40 12 im3 g ps t c = ? 30 c d , drain efficiency (%), g ps , power gain (db) 36 ?50 d 25 c ?30 c 85 c acpr ?10 39 p6db = 53.51 dbm (224.39 w) p3db = 53.04 dbm (201.42 w) p1db = 52.22 dbm (162.72 w) 0.5 300 25 c 85 c ?30 c 25 c ?30 c 85 c v dd = 28 vdc, i dq = 1300 ma f1 = 2345 mhz, f2 = 2355 mhz 2?carrier w?cdma, 10 mhz carrier spacing, 3.84 mhz channel bandwidth, par = 8.5 db @ 0.01% probability (ccdf)
mrf6s23140hr3 mrf6s23140hsr3 7 rf device data freescale semiconductor typical characteristics 300 11 17 0.5 0 60 p out , output power (watts) cw figure 10. power gain and drain efficiency versus output power v dd = 28 vdc i dq = 1300 ma f = 2350 mhz t c = ?30 c 25 c ?30 c 100 10 16 15 14 13 12 50 40 30 20 10 figure 11. power gain versus output power p out , output power (watts) cw d , drain efficiency (%) d g ps g ps , power gain (db) g ps , power gain (db) 250 11 16 0 200 50 12 100 150 14 13 15 i dq = 1300 ma f = 2350 mhz 85 c 25 c 85 c 28 v 32 v figure 12. mttf factor versus junction temperature 1 v dd = 24 v 250 10 8 90 t j , junction temperature ( c) this above graph displays calculated mttf in hours when the device is operated at v dd = 28 vdc, p out = 28 w avg., and d = 25%. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 7 10 6 10 5 110 130 150 170 190 mttf (hours) 210 230
8 rf device data freescale semiconductor mrf6s23140hr3 mrf6s23140hsr3 w - cdma test signal 10 0.0001 100 0 peak?to?average (db) figure 13. ccdf w - cdma 3gpp, test model 1, 64 dpch, 67% clipping, single - carrier test signal 10 1 0.1 0.01 0.001 24 68 probability (%) w?cdma. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. im3 measured in 3.84 mhz bandwidth @ 10 mhz offset. par = 8.5 db @ 0.01% probability on ccdf figure 14. 2-carrier w-cdma spectrum f, frequency (mhz) 3.84 mhz channel bw ?im3 in 3.84 mhz bw +im3 in 3.84 mhz bw ?acpr in 3.84 mhz bw +acpr in 3.84 mhz bw (db) +20 +30 0 ?10 ?40 ?50 ?60 ?70 ?80 ?20 20 515 10 0 ?5 ?10 ?15 ?20 ?25 25 ?30
mrf6s23140hr3 mrf6s23140hsr3 9 rf device data freescale semiconductor z o = 25 z load f = 2300 mhz f = 2400 mhz z source f = 2400 mhz f = 2300 mhz v dd = 28 vdc, i dq = 1300 ma, p out = 28 w avg. f mhz z source z load 2300 12.92 + j6.65 1.05 - j2.88 2310 13.06 + j6.73 1.04 - j2.82 2320 13.21 + j6.80 1.03 - j2.76 2330 13.37 + j6.87 1.01 - j2.70 2340 13.53 + j6.94 1.00 - j2.64 2350 13.70 + j7.01 0.99 - j2.58 2360 13.88 + j7.08 0.97 - j2.52 2370 14.06 + j7.14 0.96 - j2.46 2380 14.25 + j7.21 0.95 - j2.40 2390 14.45 + j7.27 0.94 - j2.34 2400 14.66 + j7.33 0.93 - j2.28 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network figure 15. series equivalent source and load impedance
10 rf device data freescale semiconductor mrf6s23140hr3 mrf6s23140hsr3 package dimensions case 465b - 03 issue d ni - 880 mrf6s23140hr3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. 4. recommended bolt center dimension of 1.16 (29.57) based on m3 screw. dim min max min max millimeters inches a 1.335 1.345 33.91 34.16 b 0.535 0.545 13.6 13.8 c 0.147 0.200 3.73 5.08 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 g 1.100 bsc 27.94 bsc h 0.057 0.067 1.45 1.70 k 0.175 0.205 4.44 5.21 n 0.871 0.889 19.30 22.60 q .118 .138 3.00 3.51 r 0.515 0.525 13.10 13.30 style 1: pin 1. drain 2. gate 3. source 1 3 2 d g k c e h f q 2x m a m bbb b m t m a m bbb b m t b b (flange) seating plane m a m ccc b m t m a m bbb b m t aa (flange) t n (lid) m (insulator) s m a m aaa b m t (insulator) r m a m ccc b m t (lid) s 0.515 0.525 13.10 13.30 m 0.872 0.888 22.15 22.55 aaa 0.007 ref 0.178 ref bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref 4 case 465c - 02 issue d ni - 880s mrf6s23140hsr3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 0.905 0.915 22.99 23.24 b 0.535 0.545 13.60 13.80 c 0.147 0.200 3.73 5.08 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 n 0.871 0.889 19.30 22.60 r 0.515 0.525 13.10 13.30 style 1: pin 1. drain 2. gate 3. source 1 seating plane 2 d k c e h f m a m bbb b m t b b (flange) m a m ccc b m t m a m bbb b m t aa (flange) t n (lid) m (insulator) m a m ccc b m t m a m aaa b m t r (lid) s (insulator) s 0.515 0.525 13.10 13.30 m 0.872 0.888 22.15 22.55 bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref aaa 0.007 ref 0.178 ref
mrf6s23140hr3 mrf6s23140hsr3 11 rf device data freescale semiconductor product documentation refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 2 dec. 2008 ? modified data sheet to reflect rf test reduction described in product and process change notification number, pcn13232, p. 1, 2 ? removed lower thermal resistance and low gold plating bullets from features section as functionality is standard, p. 1 ? operating junction temperature increased from 200 c to 225 c in maximum ratings table and related ?continuous use at maximum temperature will affect mttf? footnote added, p. 1 ? corrected v ds to v dd in the rf test condition voltage callout for v gs(q) , and added ?measured in functional test?, on characteristics table, p. 2 ? updated part numbers in table 5, component designations and values, to rohs compliant part numbers, p. 3 ? removed lower voltage tests from fig. 11, power gain versus output power, due to fixed tuned fixture limitations, p. 7 ? replaced fig. 12, mttf versus junction temperature with updated graph. removed amps 2 and listed operating characteristics and location of mttf calculator for device, p. 7 ? added product documentation and revision history, p. 11
12 rf device data freescale semiconductor mrf6s23140hr3 mrf6s23140hsr3 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006, 2008. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140 fax: +1 - 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf6s23140h rev. 2, 12/2008

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